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BCR198W Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | |||
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Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR198, TS ⤠102°C
BCR198F, TS ⤠128°C
BCR198L3, TS ⤠135°C
BCR198S, TS ⤠115°C
BCR198T, TS ⤠109°C
BCR198W, TS ⤠124°C
SEMB2, TS ⤠75°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BCR198
BCR198F
BCR198L3
BCR198S
BCR198T
BCR198W
SEMB2
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Symbol
RthJS
Product specification
BCR198.../SEMB2
Value
Unit
50
V
50
10
50
70
mA
mW
200
250
250
250
250
250
250
150
°C
-65 ... 150
Value
Unit
K/W
⤠240
⤠90
⤠60
⤠140
⤠165
⤠124
⤠300
1For calculation of RthJA please refer to Application Note Thermal Resistance
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