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BCR158W Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | |||
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Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR158, TS ⤠102°C
BCR158F, TS ⤠128°C
BCR158L3, TS ⤠135°C
BCR158T, TS ⤠109°C
BCR158W, TS ⤠124°C
SEMB10, TS ⤠75°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BCR158
BCR158F
BCR158L3
BCR158T
BCR158W
SEMB10
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Symbol
RthJS
Product specification
BCR158.../SEMB10
Value
Unit
50
V
50
5
10
100
mA
mW
200
250
250
250
250
250
150
°C
-65 ... 150
Value
Unit
K/W
⤠240
⤠90
⤠60
⤠165
⤠105
⤠300
1For calculation of RthJA please refer to Application Note Thermal Resistance
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