BCR133W Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR133, T_S ≤ 102°C
BCR133F, T_S ≤ 128°C
BCR133L3, T_S ≤ 135°C
BCR133S, T_S ≤ 115°C
BCR133T, T_S ≤ 109°C
BCR133U, T_S ≤ 118°C
BCR133W, T_S ≤ 124°C
SEMH11, T_S ≤ 75°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point¹⁾
BCR133
BCR133F
BCR133L3
BCR133S
BCR133T
BCR133U
BCR133W
SEMH11
Symbol
V_CEO
V_CBO
V_EBO
V_i(on)
I_C
P_tot
T_j
T_stg
Symbol
R_thJS
Product specification
BCR133.../SEMH11
Value
Unit
50
V
50
10
20
100
mA
mW
200
250
250
250
250
250
250
250
150
°C
-65 ... 150
Value
Unit
K/W
≤ 240
≤ 90
≤ 60
≤ 140
≤ 165
≤ 133
≤ 105
≤ 300
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
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