 English |
|
|
|
|
|
|
|
| BCP68 Datasheet, PDF (2/2 Pages) NXP Semiconductors – NPN medium power transistor | |||
| |||
| ◁ |
SMD Type
TransistIoCrs
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
BCP68
DC current gain
BCP68-25
Collector-emitter saturation voltage
Base-emitter voltage
Collector capacitance
Transition frequency
Symbol
ICBO
IEBO
hFE
VCEsat
VBE
Cc
fT
Testconditons
IE = 0 A; VCB = 25 V
IE = 0 A; VCB = 25 V; Tj = 150
IC = 0 A; VEB = 5 V
VCE = 10 V; IC = 5 mA
VCE = 1 V; IC = 500 mA
VCE = 1 V; IC = 1 A
VCE = 1 V; IC = 500 mA
IC = 100 mA; IB = 1 A;
VCE = 10 V; IC = 5 mA
VCE = 1 V; IC = 1 A
IE = ie = 0 A; VCB = 10 V; f = 1 MHz
IC = 50 mA; VCE = 5 V; f = 100 MHz
Product specification
BCP68
Min Typ Max Unit
100 nA
10 ìA
100 nA
50
85
375
60
160
375
500 mV
700 mV
1
V
22
pF
40 170
MHz
hFE Classification
TYPE
Marking
BCP68
BCP68
BCP68-25
BCP68/25
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
2 of 2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese