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| BCF29 Datasheet, PDF (2/2 Pages) NXP Semiconductors – PNP general purpose transistors | |||
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SMD Type
TransistIoCrs
Product specification
BCF29,BCF30
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
BCF29
BCF30
BCF29
BCF30
Collector-emitter saturation voltage
Base to emitter saturation voltage
Base to emitter voltage
Collector capacitance
Transition frequency
Noise figure
Symbol
Testconditons
ICBO IE = 0; VCB = -32 V
ICBO IE = 0; VCB = -32 V; Tj = 100
IEBO IC = 0; VEB = -5 V
hFE IC = -10 ìA; VCE = -5 V
hFE IC = -2 mA; VCE = -5 V
IC = -10 mA; IB = -0.5 mA
VCE(sat)
IC = -50 mV; IB = -2.5 mA
IC = -10 mA; IB = -0.5 mA
VBE(sat)
IC = -50 mA; IB = -2.5 mA
VBE IC = -2 mA; VCE = -5 V
CC IE = ie = 0; VCB = -10 V; f = 1 MHz
fT IC = -10 mA; VCE = -5 V; f = 100 MHz
NF
IC = -200 ìA; VCE = -5 V; RS = 2 kÃ;
f = 1 kHz; B = 200 Hz
Min Typ Max Unit
-100 nA
-10 ìA
-100 nA
90
150
120
260
215
500
-80 -300 mV
-150
mV
-720
mV
-810
mV
-600
-750 mV
4.5
pF
100
MHz
1
4 dB
hFE Classification
TYPE
Marking
BCF29
C7p
BCF30
C8p
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