BC868 Datasheet, PDF (2/2 Pages) NXP Semiconductors – NPN medium power transistor

SMD Type
TransistIoCrs
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
BC868
BC868-25
Collector-emitter saturation voltage
Base to emitter voltage
Collector capacitance
Transition frequency
Symbol
Testconditons
ICBO VCB = 25 V, IE = 0
VCB = 25 V, IE = 0; Tj = 25
IEBO VEB = 5 V, IC = 0
IC = 5 mA; VCE = 10 V
hFE IC = 500 mA; VCE = 1 V
IC = 1 A; VCE = 1 V
hFE IC = 500 mA; VCE = 1 V
VCE(sat) IC = 1 A; IB = 100 mA
IC = 5 mA; VCE = 10 V
VBE
IC = 1 A; VCE = 1 V
CC IE = Ie = 0; VCB = 10 V; f = 1 MHz
fT
IC = 50 mA; VCE = 5 V; f = 100 MHz
BC868
Min Typ Max Unit
100 nA
10 ìA
100 nA
50
85
375
60
160
375
500 mV
700 mV
1
V
22
pF
40 170
MHz
hFE Classification
TYPE
Marking
BC868
CAC
BC868-25
CDC
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