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| BC557 Datasheet, PDF (2/2 Pages) Fairchild Semiconductor – Switching and Amplifier | |||
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ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base
breakdown voltage
BC556
BC557
BC558
V(BR)CBO IC= -0.1mA,IE=0
Collector-emitter
breakdown voltage
BC556
BC557
BC558
V(BR)CEO IC=-2mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA,IC=0
Collector cut-off current
BC556
BC557
VCB=-70V,IE=0
ICBO
VCB=-45V,IE=0
BC558
VCB=-25V,IE=0
Collector cut-off current
BC556
BC557
VCE=-60V,IB=0
ICEO
VCE=-40V,IB=0
BC558
VCE=-25V,IB=0
Emitter cut-off current
DC current gain
IEBO
hFE *
VEB=-5V,IC=0
VCE=-5V, IC=-2mA
Collector-emitter saturation voltage
VCE(sat)
IC=-10mA,IB=-0.5mA
IC=-100mA,IB=-5mA
Base-emitter saturation voltage
VBE(sat)
IC=-10mA,IB=-0.5mA
IC=-100mA,IB=-5mA
Base-emitter voltage
VCE=-5V, IC=-2mA
VBE
VCE=-5V, IC=-10mA
Collector output capacitance
Cob
VCB=-10V,IE=0, f=1MHz
BC556
Transition frequency
BC557
fT
VCE=-5V,IC=-10mA, f=100MHz
BC558
Product specification
Min
-80
-50
-30
-65
-45
-30
-5
120
-0.55
Typ Max Unit
V
V
V
-0.1 μA
-0.1 μA
-0.1 μA
-0.1 μA
-0.1 μA
-0.1 μA
-0.1 μA
800
-0.3
V
-0.65 V
-0.8
V
-1
V
-0.7
V
-0.82 V
6
pF
150
MHz
3150
MHz
150
MHz
CLASSIFICATION of hFE
RANK
RANGE
A
120-220
B
180-460
C
420-800
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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