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BBY57-02W Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio)
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Product specification
BBY57...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 8 V
VR = 8 V, TA = 85 °C
IR
nA
-
-
10
-
- 100
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2.5 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 4 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 3 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
Series resistance
VR = 1 V, f = 470 MHz, BBY57-02L
VR = 1 V, f = 470 MHz, all others
CT
CT1/CT3
16.5
-
-
3.5
-
17.5
9.35
7
4.7
2.45
pF
18.6
-
-
5.5
-
CT1/CT4
3
3.7 4.5
rS

- 0.35 -
-
0.3
-
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