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| BBY56-02W Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) | |||
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Product specification
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
BBY56...
Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 6 V
VR = 6 V, TA = 85 °C
IR
nA
-
-
5
-
- 100
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 4 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 3 V, f = 1 MHz
VR = 1 V, VR = 4 V, f = 1 MHz
Series resistance
VR = 1 V, f = 470 MHz
CT
pF
37 40 43
22
-
25
14.8 15.8 16.8
- 12.1 -
CT1/CT3
rS
2.15
-
-
2.53
3.3
0.25
-
-
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