BB644 Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance)

Product specification
BB644 /BB664...
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
V_R = 30 V
V_R = 30 V, T_A = 85 °C
I_R
nA
-
-
10
-
- 100
AC Characteristics
Diode capacitance
V_R = 1 V, f = 1 MHz
V_R = 2 V, f = 1 MHz
V_R = 25 V, f = 1 MHz
V_R = 28 V, f = 1 MHz
Capacitance ratio
V_R = 1 V, V_R = 28 V, f = 1 MHz
Capacitance ratio
V_R = 2 V, V_R = 25 V, f = 1 MHz
Capacitance matching¹⁾
V_R = 1 V, V_R = 28 V, f = 1 MHz
Series resistance
V_R = 5 V, f = 470 MHz
C_T
39
29.4
2.5
2.4
C_T1/C_T28 15
41.8
31.85
2.7
2.55
16.4
pF
44.5
34.2
2.85
2.75
17.8
C_T2/C_T25 11 11.8 12.6
∆C_T/C _T
-
-
2%
r_S
-
0.6 0.75 Ω
1_{For details please refer to Application Note 047.}
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