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BB640 Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I)
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Product specification
BB640...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 30 V
VR = 30 V, TA = 85 °C
IR
nA
-
-
10
-
- 200
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 25 V, f = 1 MHz
VR = 28 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio
VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance matching1)
VR = 1 V, VR = 28 V, f = 1 MHz
Series resistance
CT = 12 pF, f = 100 MHz
CT
62
47.5
2.85
2.8
CT1/CT28 19.5
69
54.5
3.28
3.05
-
pF
76
61.5
3.7
3.3
25
CT2/CT25 15 16.6
-
CT/CT
-
-
2.5 %
rS
- 1.15 - 
1For details please refer to Application Note 047.
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