BB639 Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – Silicon Variable Capacitance Diode (For tuning of extended frequency bands in VHF TV/VTR tuners)

Product specification
BB639/BB659...
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
V_R = 30 V
V_R = 30 V, T_A = 85 °C
I_R
nA
-
-
10
-
- 200
AC Characteristics
Diode capacitance
V_R = 1 V, f = 1 MHz
V_R = 2 V, f = 1 MHz
V_R = 25 V, f = 1 MHz
V_R = 28 V, f = 1 MHz
C_T
pF
36 38.3 40
27.7 29.75 31.8
2.5 2.85 3.2
2.4 2.6 2.9
Capacitance ratio
C_T1/C_T28
V_R = 1 V, V_R = 28 V, f = 1 MHz
Capacitance ratio
C_T2/C_T25
V_R = 2 V, V_R = 25 V, f = 1 MHz
Capacitance matching¹⁾

C_T/C_T
V_R = 1 V, V_R = 28 V, f = 1 MHz, 7 diode sequence
BB639
13.5
9.8
-
14.7
10.4
-
-
-
%
2.5
V_R = 1 V, V_R = 28 V, f = 1 MHz, 4 diode sequence
BB659
-
0.3
1
V_R = 1 V, V_R = 28 V, f = 1 MHz, 7 diode sequence
BB659
-
0.4
2
Series resistance
r_S
V_R = 5 V, f = 470 MHz
1_{For details please refer to Application Note 047.}
- 0.65 0.7 
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