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BB535 Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – Silicon Variable Capacitance Diode (For UHF and TV/TR tuners Large capacitance ratio, low series resistance)
Product specification
BB535/BB555...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 30 V
VR = 30 V, TA = 85 °C
IR
nA
-
-
10
-
- 200
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 25 V, f = 1 MHz
VR = 28 V, f = 1 MHz
CT
pF
17.5 18.7 20
14.01 15 16.1
2.05 2.24 2.4
1.9 2.1 2.3
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
CT1/CT28
Capacitance ratio
VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance matching1)
VR = 1V to 28V, f = 1 MHz, 7 diodes sequence,
BB535
CT2/CT25
∆CT/CT
VR = 1V to 28V, f = 1 MHz, 4 diodes sequence,
BB555/-02V
VR = 1V to 28V, f = 1 MHz, 7 diodes sequence,
BB555/-02V
8.2 8.9 9.8 -
6 6.7 7.5
%
-
-
2.5
- 0.15 1
- 0.25 2
Series resistance
rS
VR = 3 V, f = 470 MHz
1For details please refer to Application Note 047
- 0.58 0.75 Ω
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