BAT254 Datasheet, PDF (2/2 Pages) NXP Semiconductors – Schottky barrier diode

Product specification
BAT254
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Max
Unit
IF = 0.1 mA
240
IF = 1 mA
320
forward voltage
VF
IF = 10 mA
400
mV
IF = 30 mA
500
IF = 100 mA
800
reverse current
IR
VR = 25 V, note 1
2
A
when switched from IF = 10 mA to
reverse recovery time
trr
IR = 10 mA; RL = 100
5
ns
measured at IR = 1 mA
diode capacitance
Cd
f = 1 MHz; VR = 1 V;
10
pF
thermal resistance from junction to ambient
Rth j-a
note 2
315
K/W
Note
1.Pulsed test: tp = 300 s, ä = 0.02.
2.Refer to SOD110 standard mounting conditions.
Marking
Marking
L4
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