BAS678 Datasheet, PDF (2/2 Pages) NXP Semiconductors – High-speed diode

Product specification
BAS678
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Max
Unit
Forward voltage
VF
IF = 200 mA;d.c. ; Note 1
1.0
V
VR = 10 V;
15
nA
Reverse current
IR
VR = 75 V;
100
nA
VR = 75 V; Tj = 150
50
A
Diode capacitance
Cd
f = 1 MHz; VR = 0;
2
pF
Reverse recovery time
when switched from IF = 400 mA to IR = 400 mA;
trr
RL = 100 ;measured at IR = 40 mA;
6
ns
Forward recovery voltage
Vf r
when switched from IF = 10 mA;tr = 20 ns;
2
V
thermal resistance from junction to tie-point Rth j-tp
330
K/W
thermal resistance from junction to ambient
Rth j-a
500
K/W
Note
1. Tamb = 25 ; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board.
Marking
Marking
L52
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