BAS28 Datasheet, PDF (2/2 Pages) NXP Semiconductors – High-speed double diode

Product specification
BAS28
Electrical Characteristics Ta = 25
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
Symbol
Test Condition
Min
Max
Unit
IF = 1 mA
715
mV
IF = 10 mA
VF
IF = 50 mA
855
mV
1
V
IF =150 mA
1.25
V
VR = 25 V
30
nA
VR = 75 V
IR
VR = 25 V; Tj = 150
1
A
30
A
VR = 75 V; Tj = 150
50
A
Cd
f = 1 MHz; VR = 0
1.5
pF
when switched from IF = 10 mA to IR = 10 mA;
trr
RL = 100 measured at IR = 1 mA;
4
ns
Vfr
when switched from IF = 10 mA;tr = 20 ns;
1.75
V
Marking
Marking
JT
http://www.twtysemi.com
[e-mail]
4008-318-123
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