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| AP2320GN-HF Datasheet, PDF (2/2 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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Product specification
AP2320GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=10V, ID=0.25A
VGS=4.5V, ID=0.2A
VDS=VGS, ID=250uA
VDS=10V, ID=0.2A
VDS=100V, VGS=0V
VGS=+20V, VDS=0V
ID=0.4A
VDS=80V
VGS=10V
VDS=50V
ID=0.4A
RG=3.3Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
100 -
-
V
-
-
5Ω
-
-
9Ω
1
-
3V
- 0.2 -
S
-
- 10 uA
-
- +100 nA
-
2 3.2 nC
- 0.5 - nC
- 0.5 - nC
-
3
- ns
-
7
- ns
- 9.5 - ns
- 4.5 - ns
- 32 51 pF
- 9.5 - pF
-
6
- pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=0.4A, VGS=0V
IS=1A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.5 V
- 27 - ns
- 28 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ;400â/W when mounted on min. copper pad.
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sales@twtysemi.com
4008-318-123
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