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| AP2304AN Datasheet, PDF (2/2 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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Product specification
AP2304AN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=2.5A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
VGS=4.5V, ID=2A
VDS=VGS, ID=250uA
VDS=10V, ID=2.5A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS=±20V
ID=2.5A
VDS=24V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω,VGS=10V
RD=15Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
30 -
-
V
- 0.1 - V/â
-
- 117 mΩ
-
- 190 mΩ
1
-
3
V
-
2
-
S
-
-
1 uA
-
- 10 uA
-
- ±100 nA
-
3
5 nC
- 0.8 - nC
- 1.8 - nC
-
5
- ns
-
9
- ns
-
11
-
ns
-
2
- ns
- 120 190 pF
-
62
-
pF
-
24
-
pF
- 1.67 -
â¦
Source-Drain Diode
Symbol
Parameter
VSD
Forward On Voltage2
trr
Reverse Recovery Time2
Qrr
Reverse Recovery Charge
Test Conditions
IS=1.2A, VGS=0V
IS=2A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
-
24
-
ns
-
23
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270â/W when mounted on min. copper pad.
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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