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| AM3829P Datasheet, PDF (2/2 Pages) Analog Power – P-Channel 20-V (D-S) MOSFET With Schottky Diode | |||
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Product specification
AM3829P
MOSFET SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Limits
Unit
Min Typ Max
Static
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = -250 uA
-0.4
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = +/-8 V
±100 nA
Zero Gate Voltage Drain Current
On-State Drain CurrentA
IDSS
VDS = -16 V, VGS = 0 V
VDS = -16 V, VGS = 0 V, TJ = 55oC
ID(on)
VDS = -5 V, VGS = -4.5 V
-5
-1
uA
-10
A
Drain-Source On-State ResistanceA
Forward TranconductanceA
rDS(on)
gf s
VGS = -4.5 V, ID = -2.5 A
VGS = -2.5 V, ID = -1.9 A
VDS = -5 V, ID = -2.5 A
0.130
â¦
0.190
3
S
Diode Forward Voltage
VSD
IS = -1.6 A, VGS = 0 V
-0.70
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS = -5 V, VGS = -4.5 V,
ID = -2.5 A
6.0
0.80
nC
1.30
Turn-On Delay Time
td(on)
6.5
Rise Time
Turn-Off Delay Time
tr
td(of f )
VDD = -5 V, RL = 5 OHM,
VGEN = -4.5 V, RG = 6 OHM
20
ns
31
Fall-Time
tf
21
SCHOTTKY SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Min
Forward Voltage Drop
VF
Maximum Reverse Leakage Current
Irm
IF = 0.5 A
IF = 0.5 A, TJ = 125oC
Vr = 30 V
Vr = 30 V, TJ = 75oC
Vr = 30 V, TJ = 125oC
Junction Capacitance
CT
Vr = 10 V
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Limits
Typ Max
0.48
0.4
0.1
1
10
31
Unit
V
V
mA
pF
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