AM3560C Datasheet, PDF (2/2 Pages) Analog Power – N & P-Channel 60-V (D-S) MOSFET

Electrical Characteristics
Product specification
AM3560C
Parameter
Symbol
Test Conditions
Min
Static
Gate-Source Threshold Voltage V_GS(th)
V_DS = V_GS, I_D = 250 uA (N-ch)
V_DS = V_GS, I_D = -250 uA (P-ch)
1
-1
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ±20 V
Zero Gate Voltage Drain Current I_DSS
V_DS = 20 V, V_GS = 0 V (N-ch)
V_DS = -20 V, V_GS = 0 V (P-ch)
On-State Drain Current
I_D(on)
V_DS = 5 V, V_GS = 10 V (N-ch)
V_DS = -5 V, V_GS = -10 V (P-ch)
4
-4
V_GS = 10 V, I_D = 1.8 A (N-ch)
Drain-Source On-Resistance
r_DS(on)
V_GS = 4.5 V, I_D = 1.5 A
V_GS = -10 V, I_D = -1.2 A
(N-ch)
(P-ch)
V_GS = -4.5 V, I_D = -1 A (P-ch)
Forward Transconductance
g_fs
V_DS = 15 V, I_D = 1.8 A (N-ch)
V_DS = -15 V, I_D = -1.2 A (P-ch)
Diode Forward Voltage
V_SD
I_S = 1.2 A, V_GS = 0 V
I_S = -1.2 A, V_GS = 0 V
(N-ch)
(P-ch)
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
N - Channel
V_DS = 30 V, V_GS = 4.5 V, I_D = 1.8 A
N - Channel
V_DD = 30 V, R_L = 16.6 Ω, I_D = 1.8 A,
V_GEN = 10 V, R_GEN = 6 Ω
N - Channel
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
P - Channel
V_DS = -30 V, V_GS = 4.5 V, I_D = -1.2 A
P - Channel
V_DD = -30 V, R_L = 25 Ω, I_D = -1.2 A,
V_GEN = -10 V, R_GEN = 6 Ω
P - Channel
V_DS = -15 V, V_GS = 0 V, f = 1 MHz
Typ Max
±100
1
-1
153
185
310
405
15
20
0.78
-0.82
4.9
1.3
2.5
4
5
16
4
297
40
28
4.9
1.5
2.2
6
5
19
7
385
40
28
Unit
V
V
nA
uA
A
A
mΩ
mΩ
S
S
V
V
nC
ns
pF
nC
ns
pF
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