AM3548C Datasheet, PDF (2/2 Pages) Analog Power – N & P-Channel 40-V (D-S) MOSFET

Product specification
SPECIFICATIONS (T_A = 25^oC UNLESS OTHERWISE NOTED)
Parameter
Static
Gate-Threshold Voltage
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current^A
Drain-Source On-Resistance^A
Forward Tranconductance^A
Diode Forward Voltage^A
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Symbol
Test Conditions
Ch
V_GS(th)
VGS = VDS, ID = 250 uA
VGS = VDS, ID = -250 uA
N
P
VDS = 0 V, VGS = 20 V
N
I_GSS
V_DS = 0 V, V_GS = -20 V
P
VDS = 32 V, VGS = 0 V
N
VDS = -32 V, VGS = 0 V
P
I_DSS
V_DS = 24 V, V_GS = 0 V, T_J = 55^oC
N
V_DS = -24 V, V_GS = 0 V, T_J = 55^oC
P
I_D(on)
V_DS = 5 V, V_GS = 10 V
N
V_DS = -5 V, V_GS = -10 V
P
VGS = 10 V, ID = 3.7 A
N
r_DS(on)
VGS = -10 V, ID = 3.1 A
P
VGS = 4.5 V, ID = 3.3 A
N
VGS = -4.5 V, ID = -2.2 A
P
g_fs
V_DS = 5 V, I_D = 3.7 A
N
V_DS = -5 V, I_D = 3.1 A
P
V_SD
I_S = 1.05 A, V_GS = 0 V
N
I_S = -1.05 A, V_GS = 0 V
P
Q_g
N
N-Channel
P
Q_gs
V_DS=15V, V_GS=4.5V, I_D=2.7A
N
P-Channel
P
Q_gd
VDS=-15V, VGS=-4.5V, ID=-3.1A _N
P
t_d(on)
N
N-Chaneel
P
t_r
V_DD=15V, VGS=4.5V, ID=1A ,
N
R_GEN=15Ω,
P
t_d(off)
P-Channel
VDD=-15V, VGS=-4.5V, ID=-1A
N
P
t_f
RGEN=15Ω
N
P
Notes
AM3548C
Limits
Min Typ
Max ^Unit
1
V
-1
100
uA
-100
1
uA
-1
10
uA
-10
5
A
-5
0.063
0.172 _Ω
0.082
0.240
10
S
5
0.80
S
-0.83
2.2
3.8
0.5
nC
0.6
0.8
1.5
5
5
12
15
nS
13
20
7
20
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
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