AM2343P Datasheet, PDF (2/2 Pages) Analog Power – P-Channel 30-V (D-S) MOSFET

Electrical Characteristics
Product specification
AM2343P
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Gate-Source Threshold Voltage V_GS(th)
V_DS = V_GS, I_D = -250 uA
-1
V
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ±20 V
±100 nA
Zero Gate Voltage Drain Current
I_DSS
V_DS = -24 V, V_GS = 0 V
V_DS = -24 V, V_GS = 0 V, T_J = 55°C
-1
uA
-25
On-State Drain Current
I_D(on)
V_DS = -5 V, V_GS = -10 V
-5
A
Drain-Source On-Resistance
r_DS(on)
V_GS = -10 V, I_D = -2.9 A
V_GS = -4.5 V, I_D = -2.4 A
57
mΩ
89
Forward Transconductance
g_fs
V_DS = -15 V, I_D = -2.9 A
8
S
Diode Forward Voltage
V_SD
I_S = -0.9 A, V_GS = 0 V
-0.77
V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
Q_gs
Q_gd
V_DS = -15 V, V_GS = -4.5 V,
I_D = -2.9 A
7
2.0
nC
2.9
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t_d(on)
t_r
t_d(off)
t_f
V_DS = -15 V, R_L = 5.3 Ω,
I_D = -2.9 A,
V_GEN = -10 V, R_GEN = 6 Ω
6
6
ns
27
13
Input Capacitance
C_iss
455
Output Capacitance
C_oss V_DS = 15 V, V_GS = 0 V, f = 1 MHz
63
pF
Reverse Transfer Capacitance
C_rss
52
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
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