AM2319P Datasheet, PDF (2/2 Pages) Analog Power – P - Channel Logic Level MOSFET

Product specification
AM2319P
SPECIFICATIONS (T_A = 25^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol
Test Conditions
Limits
Unit
Min Typ Max
Static
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Threshold Voltage
On-State Drain Current^A
IDSS
IGSS
VGS(th)
ID(on)
VDS = -24 V, VGS = 0 V
V_DS = -24 V, V_GS = 0 V, T_J = 55^oC
V_DS = 0 V, V_GS = ±20 V
VDS = VGS, ID = -250 uA
VDS = -5 V, VGS = -4.5 V
-1.30
-3
-1
µA
-10
±100 nA
V
A
Drain-Source On-Resistance^A
Forward Tranconductance^A
rDS(on)
gfs
VGS = -10 V, ID = -2.1 A
VGS = -4.5 V, ID = -1.7 A
VDS = -5 V, ID = -2.1 A
0.20
Ω
0.30
2
S
Diode Forward Voltage
Dynamic^b
VSD
IS = -0.4 A, VGS = 0 V
-0.70 -1.2 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = -10 V, VGS = -5 V,
ID = -2.1 A
VDS = -10 V, ID = -1.1 A,
RG = 50 Ω, VGEN = -10 V
3.4
0.8
nC
1.5
8
18
ns
52
39
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
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