AM1421P Datasheet, PDF (2/2 Pages) Analog Power – P-Channel 20-V (D-S) MOSFET

Product specification
AM1421P
SPECIFICATIONS (T_A = 25^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^A
Drain-Source On-Resistance^A
Forward Tranconductance^A
Diode Forward Voltage
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = -250 uA
V_DS = 0 V, V_GS = ±8 V
VDS = -16 V, VGS = 0 V
V_DS = -16 V, V_GS = 0 V, T_J = 55^oC
VDS = -5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -3.7 A
VGS = -2.5 V, ID = -3.1 A
VDS = -5 V, ID = -1.25 A
IS = -0.46 A, VGS = 0 V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =-10V, VGS =-4.5V,
ID = -3.7 A
VDD =-10V, IL =-1A,
VGEN = -4.5 V, RG = 6 Ω
Limits
Unit
Min Typ Max
-0.4
V
±100 nA
-1
uA
-10
-5
A
79
mΩ
110
9
S
-0.65
V
7.2
1.7
nC
1.5
10
9
ns
27
11
Notes
a.
b.
c.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
Repetitive rating, pulse width limited by junction temperature.
http://www.twtysemi.com
[e-mail]
4008-318-123
2 of 2