AM1331P Datasheet, PDF (2/2 Pages) Analog Power – P-Channel 30-V (D-S) MOSFET

Product specification
AM1331P
SPECIFICATIONS (T_A =25^oCUNLESS OTHERWISENOTED)
Parameter
Symbol
Test Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^A
Drain-Source On-Resistance^A
Forward Tranconductance^A
Diode Forward Voltage
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = -250 uA
V_DS = 0 V, V_GS = ±20 V
VDS = -24 V, VGS = 0 V
V_DS = -24 V, V_GS = 0 V, T_J = 55^oC
VDS = -5 V, VGS = -10 V
VGS = -10 V, ID = -1.5 A
VGS = -4.5 V, ID = -1.2 A
VDS = -5 V, ID = -1.5 A
IS = -0.46 A, VGS = 0 V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = -10 V, VGS = -5 V,
ID = -1.5 A
VDD = -10 V, IL = -1 A,
VGEN = -4.5 V, RG = 6 Ω
Limits
Unit
Min Typ Max
-1
V
±100 nA
-1
uA
-10
-5
A
112
mΩ
172
9
S
-0.65
V
7.2
1.7
nC
1.5
10
9
ns
27
11
Notes
a.
b.
c.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
Repetitive rating, pulse width limited by junction temperature.
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