AM1320N Datasheet, PDF (2/2 Pages) Analog Power – N-Channel 20V (D-S) MOSFET

Product specification
AM1320N
SPECIFICATIONS (T_A = 25^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Limits
Unit
Min Typ Max
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^A
Drain-Source On-Resistance^A
Forward Tranconductance^A
Diode Forward Voltage
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 uA
V_DS = 0 V, V_GS = ±8 V
V_DS = 16 V, V_GS = 0 V
V_DS = 16 V, V_GS = 0 V, T_J = 55^oC
V_DS = 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 2.0 A
V_GS = 2.5 V, I_D = 1.7 A
V_DS = 10 V, I_D = 2.0 A
I_S = 1.6 A, V_GS = 0 V
0.7
V
±100 nA
1
uA
10
10
A
58
mΩ
82
11.3
S
0.75
V
Q_g
7.5
Q_gs ^VDS ^{= 10 V, V}GS ^{= 4.5 V, I}D ^{= 2.0 A}
0.6
nC
Q_gd
1.0
C_iss
C_oss
V_DS = 15 V, V_GS = 0 V,
f = 1MHz
C_rss
720
165
pF
60
t_d(on)
8
t_r
V_DD = 10 V, R_L = 15 Ω, I_D = 1 A,
24
ns
t_d(off)
V_GEN = 4.5 V
35
t_f
10
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
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