2SK1580 Datasheet, PDF (2/2 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 16 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±3.0 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance ^Note
Drain to Source On-state Resistance ^Note
VGS(off)
| yfs |
RDS(on)1
VDS = 3.0 V, ID = 10 µA
VDS = 3.0 V, ID = 10 mA
VGS = 2.5 V, ID = 1.0 mA
RDS(on)2 VGS = 4.0 V, ID = 1.0 mA
Input Capacitance
Ciss
VDS = 3.0 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 3.0 V, ID = 10 mA
Rise Time
tr
VGS = 3.0 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Note Pulsed
TEST CIRCUIT SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
0 ^10%
VGS
90%
ID
90%
ID
Wave Form
0 ^10%
td(on)
ID
tr td(off)
90%
10%
tf
ton
toff
Product specification
2SK1580
MIN.
0.8
20
TYP.
1.1
44
9.0
6.0
18
22
4.0
27
75
78
80
MAX.
1.0
±5.0
1.6
15
10
UNIT
µA
µA
V
mS
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
http://www.twtysemi.com
[e-mail]
4008-318-123
2 of 2