2SJ625 Datasheet, PDF (2/2 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

SMD Type
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
IDSS
IGSS
VGS(off)
VDS = –20 V, VGS = 0 V
VGS = m8.0 V, VDS = 0 V
VDS = –10 V, ID = –1.0 mA
Forward Transfer Admittance
| yfs | VDS = –10 V, ID = –1.5 A
Drain to Source On-state Resistance
RDS(on)1 VGS = –4.5 V, ID = –1.5 A
RDS(on)2 VGS = –2.5 V, ID = –1.5 A
RDS(on)3 VGS = –1.8 V, ID = –1.0 A
Input Capacitance
Ciss
VDS = –10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1.0 MHz
Turn-on Delay Time
td(on)
VDD = –10 V, ID = –1.5 A
Rise Time
tr
VGS = –4.0 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Total Gate Charge
QG
VDD = –16 V
Gate to Source Charge
QGS VGS = –4.0 V
Gate to Drain Charge
QGD ID = –3.0 A
Body Diode Forward Voltage
VF(S-D) IF = 3.0 A, VGS = 0 V
Product specification
2SJ625
MIN. TYP. MAX. UNIT
–10 µA
m10 µA
–0.45 –0.75 –1.5 V
2.0 4.9
S
90 113 mΩ
128 171 mΩ
188 314 mΩ
348
pF
88
pF
38
pF
39
ns
190
ns
220
ns
250
ns
2.6
nC
0.8
nC
0.9
nC
0.89
V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG.
VGS(−)
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS(−)
VGS
Wave Form
10%
0
VDS(−)
90%
VDS
VDS
0
Wave Form
td(on)
VGS
90%
90%
10% 10%
tr td(off)
tf
ton
toff
D.U.T.
IG = −2 mA
RL
PG.
50 Ω
VDD
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