2SC4390 Datasheet, PDF (2/2 Pages) Sanyo Semicon Device – High-hFE, AF Amp Applications

SSMMDD TTyyppee
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Turn-on time
Symbol
Testconditons
ICBO VCB = 15V, IE=0
IEBO VEB = 10V, IC=0
hFE VCE =2V , IC = 500mA
fT VCE = 10V , IC = 50mA
Cob VCB = 10V , f = 1.0MHz
VCE(sat) IC = 1 A , IB = 20mA
VBE(sat) IC = 1 A , IB = 20mA
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
ton
Storage time
tstg
Fall time
tf
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Product specification
2SC4390
Min Typ Max Unit
0.1 ìA
0.1 ìA
800 1500 3200
260
MHz
280
pF
0.11 0.5 V
0.87 1.2 V
20
V
10
V
15
V
0.13
ìs
0.8
ìs
0.1
ìs
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