2PB710A Datasheet, PDF (2/2 Pages) NXP Semiconductors – PNP general purpose transistor

Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
2PB710AQ
2PB710AR
2PB710AS
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector capacitance
Transition frequency
2PB710AQ
2PB710AR
2PB710AS
*. Pulse test: tp 300 ìs; ä 0.02.
Product specification
2PB710A
Symbol
Testconditons
Min Typ Max Unit
ICBO
IE = 0; VCB = -60 V
IE = 0; VCB = -60 V; Tj = 150
-10 nA
-5 ìA
IEBO IC = 0; VEB = -5 V
-10 nA
85
170
hFE IC = -150 mA; VCE = -10 V*
120
240
170
340
IC = -500 mA; VCE = -10 V; *
40
VCEsat IC = -300 mA; IB = -30 mA *
-600 mV
VBEsat IC = -300 mA; IB = -30 mA *
-1.5 V
Cc IE = ie = 0; VCB = -10 V; f = 1 MHz
15 pF
100
fT IC = -50 mA; VCE = -10 V; f = 100 MHz* 120
MHz
140
Marking
Type Number
Marking
2PB710AQ
DQ
2PB710AR
DR
2PB710AS
DS
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