ZVP3306FTA Datasheet, PDF (1/1 Pages) Diodes Incorporated – SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

ZVP3306F
FEATURES
* 60 Volt V_DS
* R_DS(on)=14Ω
D
S
COMPLEMENTARY TYPE – ZVN3306F
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T_amb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_DS
I_D
I_DM
V_GS
P_tot
T_j:T_stg
SOT23
VALUE
-60
-90
-1.6
± 20
330
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV_DSS -60
V
I_D=-1mA, V_GS=0V
Gate-Source Threshold
Voltage
V_GS(th) -1.5 -3.5 V
I_D=-1mA, V_DS= V_GS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current
Static Drain-Source On-State
Resistance
I_GSS
I_DSS
I_D(on)
R_DS(on)
20 nA
-0.5 µA
-50 µA
-400
mA
14 Ω
V_GS=± 20V, V_DS=0V
V_DS=-60 V, V_GS=0V
V_DS=-48 V, V_GS=0V, T=125°C(2)
V_DS=-18 V, V_GS=-10V
V_GS=-10V, I_D=-200mA
Forward Transconductance g_fs
60
mS V_DS=-18V, I_D=-200mA
Input Capacitance
Common Source Output
Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
50 pF
25 pF V_DS=-18V, V_GS=0V, f=1MHz
8
pF
8
ns
8
ns
V_DD≈-18V, I_D=-200mA
8
ns
8
ns
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