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| ZVN3320FTA Datasheet, PDF (1/1 Pages) Diodes Incorporated – SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |||
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FEATURES
* 200 Volt VDS
* RDS(on)= 25â¦
ZVN3320F
S
D
G
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
200
V
Continuous Drain Current at Tamb=25°C
ID
60
mA
Pulsed Drain Current
IDM
1
A
Gate-Source Voltage
VGS
± 20
V
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
200
V
ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th)
1.0
3.0
V
ID=1mA, VDS= VGS
Gate-Body Leakage
IGSS
Zero Gate Voltage
IDSS
Drain Current
100 nA VGS=± 20V, VDS=0V
10
µA VDS=200V, VGS=0V
50
µA VDS=160V, VGS=0V,
T=125°C(2)
On-State Drain Current
ID(on)
250
Static Drain-Source On-State RDS(on)
25
Resistance
mA VDS=25V, VGS=10V
â¦
VGS=10V,ID=100mA
Forward Transconductance
gfs
75
mS VDS=25V,ID=100mA
Input Capacitance
Common Source
Output Capacitance
Ciss
Coss
Reverse Transfer Capacitance Crss
45
pF
18
pF VDS=25V, VGS=0V, f=1MHz
5
pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
5
ns
7
ns
6
ns
6
ns
http://www.twtysemi.com sales@twtysemi.com
VDD â25V, ID=100mA
4008-318-123
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