 English |
|
|
|
|
|
|
|
| ZVN3306FTA Datasheet, PDF (1/1 Pages) Diodes Incorporated – SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |||
| |||
|
FEATURES
* RDS(on)= 5â¦
* 60 Volt VDS
COMPLEMENTARY TYPE - ZVP3306F
PARTMARKING DETAIL - MC
ZVN3306F
Product specification
S
D
G
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
60
V
Continuous Drain Current at Tamb=25°C
ID
150
mA
Pulsed Drain Current
IDM
3
A
Gate-Source Voltage
VGS
± 20
V
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
60
V
ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th)
0.8
2.4
V
ID=1mA, VDS= VGS
Gate-Body Leakage
IGSS
20
Zero Gate Voltage
IDSS
0.5
Drain Current
50
On-State Drain Current(1)
ID(on)
750
Static Drain-Source On-State RDS(on)
5
Resistance (1)
nA VGS=± 20V, VDS=0V
µA VDS=60V, VGS=0V
µA VDS=48V, VGS=0V, T=125°C(2)
mA VDS=18V, VGS=10V
â¦
VGS=10V, ID=500mA
Forward Transconductance gfs
150
(1)(2)
mS VDS=18V, ID=500mA
Input Capacitance (2)
Ciss
Common Source
Coss
Output Capacitance (2)
35
pF
25
pF VDS=18V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss
(2)
8
pF
Turn-On Delay Time (2)(3)
td(on)
3 typ 5
ns
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
tr
td(off)
4 typ 7
4 typ 6
ns
VDD â18V, ID=500mA
ns
Fall Time (2)(3)
tf
5 typ 8
ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle â¤2% (2) Sample test.
(3) Switching times measured with 50⦠source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
http://www.twtysemi.com sales@twtysemi.com
4008-318-123 1 of 1
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese