XP161 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Power MOSFET

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Product specification
XP161
■ Features
● Low on-state resistance : Rds (on) = 0.055Ω ( Vgs = 4.5V )
Rds (on) = 0.095Ω ( Vgs = 2.5V )
Rds (on) = 0.20Ω ( Vgs = 1.5V )
● Ultra high-speed switching
● Gate protect diode built-in
● Driving Voltage : 1.5V
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
12 ³
0.48+0.1
-0.1
0.53+0.1
-0.1
Unit: mm
1.50^+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
1 Gate
1¹.^. S^Bo^au^serce
2 Drain
2².^. D^Cr^oa^lli^en^ctor
3³³.^. G^SEma^ot^uie^itrtcere
■ Absolute Maximum Ratings Ta = 25℃
1
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse)
Power dissipation *
Channel temperature
Storage temperature
* When implemented on a ceramic PCB
■ Electrical Characteristics Ta = 25℃
Symbol
Rating
Unit
VDSS
20
V
VGSS
±8
V
ID
4
A
IDP
16
A
PD
2
W
Tch
150
℃
Tstg
-55 to +150
℃
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
IDSS VDS=20V,VGS=0
IGSS VGS=±8V,VDS=0
VGS(off) VDS=10V,ID=1mA
│Yfs│ VDS=10V,ID=2A
VGS=4.5V,ID=2A
RDS(on) VGS=2.5V,ID=2A
VGS=1.5V,ID=0.5A
Ciss
Coss VDS=10V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
ID=2A,VGS(on)=5V,VDD=10V
tf
Min Typ Max Unit
10 μA
±10 μA
0.5
1.2 V
10
s
0.042 0.055 Ω
0.070 0.095 Ω
0.12 0.20 Ω
390
pF
210
pF
90
pF
10
ns
15
ns
85
ns
45
ns
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