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| VN10LFTA Datasheet, PDF (1/1 Pages) Diodes Incorporated – SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |||
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FEATURES
* 60 Volt VDS
* RDS(on)=5â¦
PARTMARKING DETAIL â MY
Product specification
VN10LF
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
60
V
Continuous Drain Current at Tamb = 25°C
ID
150
mA
Pulsed Drain Current
IDM
3
A
Gate Source Voltage
VGS
± 20
V
Power Dissipation at Tamb = 25°C
Ptot
330
mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
60
V
ID=100µA, VGS=0V
Gate-Source
Breakdown Voltage
VGS(th)
0.8
2.5
V
ID=1mA, VDS= VGS
Gate Body Leakage
Zero Gate Voltage
Drain Current (1)
IGSS
IDSS
100 nA
10
µA
VGS=± 20V, VDS=0V
VDS=60 V, VGS=0V
On State Drain
Current(1)
ID(on)
750
mA
VDS=15 V, VGS=10V
Static Drain Source On RDS(on)
State Resistance (1)
Forward
gfs
100
Transconductance
(1)(2)
5.0
â¦
7.5
â¦
VGS=10V, ID=500mA
VGS=5V, ID=200mA
mS
VDS=15V, ID=500mA
Input Capacitance (2)
Common Source
Output Capacitance (2)
Ciss
Coss
60
pF
25
pF
VDS=25 V, VGS=0V
f=1MHz
Reverse Transfer
Crss
Capacitance (2)
5
pF
Turn-On Time (2)(3)
Turn-Off Time (2)(3)
t(on)
t(off)
3
10
ns
4
10
ns
VDD â15V, ID=600mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle â¤2% (2) Sample test.
(3) Switching times measured with 50⦠source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
For typical characteristics graphs see ZVN3306F datasheet.
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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