UPA679TB Datasheet, PDF (1/3 Pages) NEC – N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Product specification
µ PA679TB
DESCRIPTION
The µ PA679TB is a switching device, which can be driven directly by a 2.5 V power source.
The µ PA679TB features a low on-state resistance and excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
N-ch RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A)
RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A)
P-ch RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.20 A)
RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)
• Two MOS FET circuits in same size package as SC-70
ORDERING INFORMATION
PART NUMBER
µ PA679TB
Marking: YA
PACKAGE
SC-88 (SSP)
PACKAGE DRAWING (Unit: mm)
0.2
+0.1
-0
0.15
+0.1
-0.05
6
5
4
1
2
3
0.65 0.65
1.3
2.0 ±0.2
0 to 0.1
0.7
0.9 ±0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20 / −20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12 / m12
V
Drain Current (DC)
Drain Current (pulse) ^Note1
Total Power Dissipation (2 units) ^Note2
ID(DC)
ID(pulse)
PT
±0.35 / m0.25 A
±1.40 / m1.00 A
0.2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 2500 mm² x 1.1 mm
PIN CONNECTION (Top View)
6
5
4
1. Source 1
2. Gate 1
3. Drain 2
4. Source 2
5. Gate 2
6. Drain 1
1
2
3
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 3