UPA678TB Datasheet, PDF (1/2 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Product specification
µ PA678TB
DESCRIPTION
The µ PA678TB is a switching device, which can be driven
directly by a 2.5 V power source.
The µ PA678TB features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.20 A)
RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.20 A)
RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)
• Two MOS FET circuits in same size package as SC-70
ORDERING INFORMATION
PART NUMBER
µ PA678TB
Marking: XA
PACKAGE
SC-88 (SSP)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−20
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) ^Note1
Total Power Dissipation (2 units) ^Note2
VGSS
ID(DC)
ID(pulse)
PT
m12
m0.25
m1.00
0.2
Channel Temperature
Tch
150
Storage Temperature
Tstg
–55 to +150
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 2500 mm² x 1.1 mm
PACKAGE DRAWING (Unit: mm)
0.2
+0.1
-0
0.15
+0.1
-0.05
6
5
4
1
2
3
0.65 0.65
1.3
2.0 ±0.2
0 to 0.1
0.7
0.9 ±0.1
PIN CONNECTION (Top View)
V
V
6
5
4
A
A
W
1. Source 1
2. Gate 1
°C
3. Drain 2
°C
4. Source 2
5. Gate 2
6. Drain 1
1
2
3
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4008-318-123
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