UPA677TB Datasheet, PDF (1/2 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Product specification
µPA677TB
DESCRIPTION
The µPA677TB is a switching device which can be driven
directly by a 2.5 V power source.
The µPA677TB features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A)
RDS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.30 A)
RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A)
• Two MOS FET circuits in same size package as SC-70
ORDERING INFORMATION
PART NUMBER
µPA677TB
Marking: WA
PACKAGE
SC-88 (SSP)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
V
Drain Current (DC)
Drain Current (pulse) ^Note1
Total Power Dissipation(2units) ^Note2
ID(DC)
±0.35
A
ID(pulse)
±1.40
A
PT
0.2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg −55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 Board of 2500 mm² x 1.1 mm 2units total.
PACKAGE DRAWING (Unit: mm)
0.2
+0.1
-0
0.15
+0.1
-0.05
6
5
4
1
2
3
0.65 0.65
1.3
2.0 ±0.2
0 to 0.1
0.7
0.9 ±0.1
PIN CONNECTUON (Top View)
6
5
4
1: Source 1
2: Gate 1
3: Drain 2
4: Source 2
5: Gate 2
6: Drain 1
1
2
3
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