UMY1N Datasheet, PDF (1/2 Pages) Unisonic Technologies – DUAL TRANSISTOR

Product specification
SOT-353 Plastic-Encapsulate Transistors
UMY1N General purpose transistors (dual transistors)
FEATURES
z Includes a 2SA1037AK and a 2SC2412K transistor in a package
z PNP and NPN transistors have common emitters
z Mounting cost and area be cut in half
MARKING: Y1
SOT-353
1
Equivalent circuit:
(3) (2) (1)
Tr2
Tr1
(4)
(5)/(6)
Tr1 Absolute maximum ratings (T_a=25℃)
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction temperature
Storage Temperature
Limits
-60
-50
-6
-150
150
150
-55~+150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
Test conditions
Min Typ Max Unit
V_(BR)CBO I_C=-50μA,I_E=0
-60
V
V_(BR)CEO I_C=-1mA,I_B=0
-50
V
V_(BR)EBO I_E=-50μA,I_C=0
-6
V
I_CBO
V_CB=-60V,I_E=0
-0.1 μA
I_EBO
V_EB=-6V,I_C=0
-0.1 μA
h_FE
V_CE=-6V,I_C=-1mA
120
560
V_CE(sat) I_C=-50mA,I_B=-5mA
-0.5
V
f_T
V_CE=-12V,I_C=-2mA, f=100MHz
140
MHz
C_ob
V_CB=-12V,I_E=0, f=1MHz
5
pF
http://www.twtysemi.com
[e-mail]
4008-318-123
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