UMX1N Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – Dual NPN General Purpose Transistors

Product specification
SOT-363 Plastic-Encapsulate Transistors
UMX1N General purpose transistors(dual transistors)
SOT-363
FEATURES
z Two 2SC2412K chips in a SOT-363 package
z Mounting possible with SOT-363 automatic mounting machines
z Transistor elements are independent, eliminating interference
z Mounting cost and area can be cut in half
MARKING:X1
(3) (2) (1)
Tr1
Tr2
(4) (5) (6)
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Units
60
V
50
V
7
V
150
mA
150
mW
150
℃
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V_(BR)CBO I_C=50μA,I_E=0
V_(BR)CEO I_C=1mA,I_B=0
V_(BR)EBO I_E=50μA,I_C=0
I_CBO
V_CB=60V,I_E=0
I_EBO
V_EB=7V,I_C=0
h_FE
V_CE=6V,I_C=1mA
V_CE(sat) I_C=50mA,I_B=5mA
f_T
V_CE=12V,I_C=2mA,f=100MHz
C_ob
V_CB=12V,I_E=0,f=1MHz
Min
Typ Max Unit
60
V
50
V
7
V
0.1
μA
0.1
μA
120
560
0.4
V
180
MHz
2.0
3.5
pF
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1