UMT1N Datasheet, PDF (1/2 Pages) Rohm – General Purpose Transistor (Isolated Dual Transistors)

Product specification
SOT-363 Plastic-Encapsulate Transistors
UMT1N General purpose transistors (dual transistors)
SOT-363
FEATURES
z Two 2SA1037AK chips in a package
z Mounting possible with SOT-363 automatic mounting machines.
z Transistor elements are independent, eliminating interference.
z Mounting cost and area be cut in half.
Marking: T1
Equivalent circuit
Absolute maximum ratings (Ta=25℃)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction temperature
T_stg
Storage Temperature
Limits
-60
-50
-6
-150
150
150
-55~+150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown Voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
Cob
Test conditions
I_C=-50μA,I_E=0
I_C=-1mA,I_B=0
I_E=-50μA,I_C=0
V_CB=-60V,I_E=0
V_EB=-6V,I_C=0
V_CE=-6V,I_C=-1mA
I_C=-50mA,I_B=-5mA
V_CE=-12V,I_E=2mA,
f=100MHz
V_CB=-12V,I_E=0, f=1MHz
Min Typ Max Unit
-60
V
-50
V
-6
V
-0.1 uA
-0.1 uA
120
560
-0.5 V
140
MHz
5 pF
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