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UMH13N Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – Dual NPN+PNP Digital Transistors (Built-in Resistors)
Product specification
Digital Transistors(built-in resistors)
UMH13N Dual Digital Transistors (NPN+NPN)
FEATURES
 Two DTC143Z chips in a package
 100 mA output current capability  
 Reduces component count 
SOT-363
1
APPLICATIONS
 Low current peripheral driver
 Control of IC inputs
 Replaces general-purpose transistors in digital applications
MARKING:
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCC
Vi
IO
PD
TJ
Tstg
Parameter
Supply Voltage
Input Voltage
Output Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
50
V
-5~+30
V
100
mA
150
mW
150
℃
-55~+150
℃
ELECTRICAL CHARACTERISTICS PER DEVICE(Ta=25℃ unless otherwise specified)
Parameter
Input turn-on voltage
Input cut-off voltage
Output voltage
Input cut-off current
Output cut-off current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Symbol
Vi(on)
Vi(off)
VO(on)
Ii
IO(off)
Gi
fT
R1
R2/R1
Test conditions
Vo=0.3V, IO=5mA
VCC=5V, IO=100µA
IO=5mA, Ii=0.25mA
Vi =5V
VCC=50V, Vi=0
VO =5V, IO=10mA
VO =10V, IO=5mA, f =100MHz
Min Typ Max
1.3
0.5
0.3
1.8
0.5
80
250
3.29 4.7 6.11
8
10
12
Unit
V
V
V
mA
µA
MHz
kΩ
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