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| UMG4N Datasheet, PDF (1/1 Pages) Diodes Incorporated – DUAL NPN PRE-BIASED TRANSISTOR | |||
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Product specification
SOT-353 Plastic-Encapsulate Transistors
UMG4N dual digital transistors (NPN+NPN)
FEATURES
Two DTC114T chips in a package
Marking: G4
Equivalent circuit
SOT-353
1
Absolute maximum ratings (Ta=25â)
Symbol Para
meter
VCBO
Collector-base Voltage
VCEO
Collector-emitter Voltage
VEBO
Emitter-base Voltage
IC
Collector current
PD
Power dissipation(note 1)
TJ
Junction temperature
Tstg
Storage temperature
Note:
1.120mW per element not be exceeded.
Value
Unit
50
V
50
V
5
V
100
mA
150
mW
150
â
-55~+150
â
ELECTRICAL CHARACTERISTICS (Ta=25â)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current transfer ration
Collector-emitter saturation voltage
Transition frequency
Input resistance
Symbol
Test c onditions
Min Typ Max Unit
V(BR)CBO IC=50μA, IE=0
50
V
V(BR)CEO IC=1mA, IB=0
50
V
V(BR)EBO IE=50μA, IC=0
5
V
ICBO
VCB=50V, IE=0
500 nA
IEBO
VEB=4V, IC=0
500 nA
hFE
VCE =5V, IC=1mA
100 250 600
VCE(sat) IC=10mA, IB=1mA
0.3
V
fT
VCE =10V, IE=-5mA, f =100MHz
250
MHz
R1
7
10
13
Kâ¦
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