UMF21N Datasheet, PDF (1/2 Pages) Rohm – Power management (dual transistors)

Product specification
SOT-363 Power Management Dual-transistors
UMF21N TRANSISTOR
DESCRIPTION
Silicon epitaxial planar transistor
FEATURES
z 2SA2018 and DTC114E are housed independently
in a package.
z Power switching circuit in a single package.
z Mounting cost and area can be cut in half.
APPLICATION
Power management circuit, mobile telephone quiver circuit
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Equivalent Circuit
(3)
(2) (1)
DTr2
R1
R2
(4)
(5)
Tr1
(6)
SOT-363
1
MARKING:F21
F21
TR1 MAXIMUM RATINGS Ta=25℃ unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
DTR2 Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
Supply voltage
V_CC
Input voltage
V_IN
Output current
I_O
I_C(MAX)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Value
-15
-12
-6
-0.5
0.15
150
-55-150
Limits
50
-10~40
50
100
150
150
-55~150
Units
V
V
V
A
W
℃
℃
Unit
V
V
mA
mW
℃
℃
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