TSM1426 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – 30V N-Channel MOSFET

SOT-363
Pin Definition:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
Product specification
TSM1426
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
75 @ V_GS = 10V
20
115 @ V_GS = 4.5V
I_D (A)
3.6
2.9
Features
● Advance Trench Process Technology
● PWM Optimized
Application
● Boost Converter in Portable devices
● Low Current Synchronous Rectifier
Ordering Information
Block Diagram
Part No.
Package
TSM1424CU6 RF SOT-363
Packing
3Kpcs / 7” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current
I_DM
Continuous Source Current (Diode Conduction)^a,b
I_S
Maximum Power Dissipation
Ta = 25^oC
Ta = 75^oC
P_D
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T_J
T_J, T_STG
Thermal Performance
Parameter
Symbol
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
RÓ¨_JF
RÓ¨_JA
Limit
30
±20
3.6
10
1.3
1.6
0.8
+150
-55 to +150
Limit
45
80
Unit
V
V
A
A
A
W
o_C
o_C
Unit
o_C/W
o_C/W
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