TPT5610 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (PNP)

Product specification
TO-92L Plastic-Encapsulate Transistors
TPT5610 TRANSISTOR (PNP)
FEATURES
z Excellent Linearity of Current Gain
z Low saturation voltage
z Complementary to TPT5609
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector- Base Voltage
-25
V
V_CEO
Collector-Emitter Voltage
-20
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current -Continuous
-1
A
P_C
Collector Power Dissipation
1
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V_(BR)CBO I_C =-10µA, I_E=0
V_(BR)CEO I_C =-1mA, I_B=0
V_(BR)EBO I_E =-10µA, I_C=0
I_CBO
V_CB=-20V, I_E=0
I_EBO
V_EB=-5V, I_C=0
h_FE
V_CE=-2V, I_C=-500mA
V_CE(sat) I_C=-800mA, I_B=-80mA
V_BE V_CE=-2V, I_C=-500mA
f_T
V_CE=-2V, I_C=-500mA
C_ob
V_CB=-10V, I_E=0, f=1MHz
Min Typ Max Unit
-25
V
-20
V
-5
V
-1
µA
-1
µA
60
240
-0.5 V
-1
V
350
MHz
38
pF
CLASSIFICATION OF h_FE
Rank
Range
A
60-120
B
85-170
C
120-240
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