TPT5609 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TRANSISTOR (NPN)

Product specification
TO-92L Plastic-Encapsulate Transistors
TPT5609 TRANSISTOR (NPN)
TO-92L
FEATURES
z Excellent Linearity of Current Gain
z Low saturation voltage
z Complementary to TPT5610
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
V_CBO
Collector- Base Voltage
25
V_CEO
Collector-Emitter Voltage
20
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current -Continuous
1
P_C
Collector Power Dissipation
0.75
T_J
Junction Temperature
150
T_stg
Storage Temperature
-55-150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V_(BR)CBO I_C =10µA, I_E=0
V_(BR)CEO I_C =1mA, I_B=0
V_(BR)EBO I_E=10µA, I_C=0
I_CBO
V_CB=20V, I_E=0
I_EBO
V_EB=5V, I_C=0
h_FE
V_CE=2V, I_C=500mA
V_CE(sat) I_C=800mA, I_B=80mA
V_BE V_CE=2V, I_C=500mA
f_T
V_CE=2V, I_C=500mA
C_ob
V_CB=10V, I_E=0, f=1MHz
Min Typ Max Unit
25
V
20
V
5
V
1
µA
1
µA
60
240
0.5 V
1
V
190
MHz
22
pF
CLASSIFICATION OF h_FE
Rank
Range
A
60-120
B
85-170
C
120-240
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