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| TK3906NND03 Datasheet, PDF (1/2 Pages) WILLAS ELECTRONIC CORP – WBFBP-03B Plastic-Encapsulate Transistors | |||
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Product specification
WBFBP-03B Plastic-Encapsulate Transistors
TK3906NND03 TRANSISTOR
DESCRIPTION
PNP Epitaxial Silicon Transistor
FEATURES
Epitaxial Planar Die Construction
Complementary NPN Type Available (TK3904NND03)
Ultra-Small Surface Mount Package
Also Available in Lead Free Version
APPLICATION
General Purpose Amplifier, switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:3N
C
3N
C
WBFBP-03B
(1.2Ã1.2Ã0.5)
unit: mm
TOP
BE
1. BASE
C
2. EMITTER
3. COLLECTOR BACK
EB
BE
MAXIMUM RATINGS(Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO Collector-Base Voltage
-40
V
VCEO Collector-Emitter Voltage
-40
V
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-200
mA
PD Power Dissipation
150
mW
RÆJA Thermal Resistance, Junction to Ambient
833
â/W
TJ
Operating Temperature
Tstg Storage and Temperature
150
â
-55~150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO
IC=-10μA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE=-10μA,IC=0
Collector cut-off current
Emitter cut-off current
DC current gain
ICEX
IEBO
hFE(1)
VCE=-30V,VEB(off)=-3V
VEB=-5V,IC=0
VCE=-1V,IC=-0.1mA
hFE(2)
VCE=-1V,IC=-1mA
hFE(3)
VCE=-1V,IC=-10mA
hFE(4)
VCE=-1V,IC=-50mA
Collector-emitter saturation voltage
hFE(5)
VCE(sat)1
VCE(sat)2
VCE=-1V,IC=-100mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
Base-emitter saturation voltage
VBE(sat)1
IC=-10mA,IB=-1mA
VBE(sat)2
IC=-50mA,IB=-5mA
Transition frequency
fT
VCE=-20V,IC=-10mA,f=100MHz
Min Typ Max Unit
-40
V
-40
V
-5
V
-0.05 μA
-0.1 μA
60
80
100
300
60
30
-0.25 V
-0.4
V
-0.65
-0.85 V
-0.95 V
250
MHz
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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