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| TK3904LLD03 Datasheet, PDF (1/2 Pages) WILLAS ELECTRONIC CORP – WBFBP-03D Plastic-Encapsulate Transistors | |||
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Product specification
WBFBP-03D Plastic-Encapsulate Transistors
TK3904LLD03 TRANSISTOR
DESCRIPTION
NPN Epitaxial Silicon Transistor
FEATURES
Epitaxial Planar Die Construction
Complementary PNP Type Available (TK3906LLD03)
Ultra-Small Surface Mount Package
Also Available in Lead Free Version
APPLICATION
General Purpose Amplifier, switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:1N
C
1N
C
WBFBP-03D
(1.0Ã1.0Ã0.5)
unit: mm
TOP
BE
1. BASE
C
2. EMITTER
3. COLLECTOR BACK
EB
BE
MAXIMUM RATINGS(Ta=25â unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
0.2
A
PC
Collector Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature
0.1
W
150
â
-55~150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Test conditions
IC=10μA,IE=0
IC=1mA,IB=0
IE=10μA,IC=0
VCE=30V,VEB(off)=3V
VEB=5V,IC=0
VCE=1V,IC=0.1mA
VCE=1V,IC=1mA
VCE=1V,IC=10mA
VCE=1V,IC=50mA
VCE=1V,IC=100mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
VCE=20V,IC=10mA,f=100MHz
Min Typ Max Unit
60
V
40
V
6
V
0.05 μA
0.1
μA
40
70
100
300
60
30
0.2
V
0.3
V
0.65
0.85
V
0.95
V
300
MHz
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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