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| TIP41C Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
TIP41/41A/41B/41C TRANSISTOR (NPN)
FEA TURES
Medium Power Linear Switching Applications
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol Parameter
TIP41 TIP41A TIP41B TIP41C
VCBO
Collector-Base Voltage
40
60
80
100
VCEO
Collector-Emitter Voltage
40
60
80
100
VEBO
Emitter-Base Voltage
5
IC
Collector Current -Continuous
6
PC
Collector Power Dissipation
2
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~+150
ELECTRICAL CHARACTERISTICS (Ta= 25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
TIP41
TIP4 1A
TIP41B
TIP41C
TIP41
TIP41A
TIP41B
TIP41C
V(BR)CBO
VCEO(sus)
IC= 1mA, IE=0
IC= 30mA, IB=0
Emitter-base breakdown voltage
Collector cut-off current
TIP41
TIP4 1A
TIP41B
TIP41C
V(BR)EBO = IE= 1mA, IC 0
VCB=40V, IE=0
ICBO
VCB=60V, IE=0
VCB=80V, IE=0
VCB=100V, IE=0
Collector cut-off current
Emitter cut-off current
TIP41/41A
TIP41B/41C
ICEO
VCE= 30V, IB= 0
VCE= 60V, IB= 0
IEBO = VEB=5V, IC 0
DC current gain
hFE(1)
hFE(2)
VCE= 4V, IC= 0.3A
VCE=4 V, IC= 3A
Collector-emitter saturation voltage
VCE(sat= ) IC=6A, IB 0.6A
Base-emitter voltage
Transition frequency
VBE(on) = VCE= 4V, IC 6A
fT
VCE=10V , IC=0.5A
f =1MHz
Unit
V
V
V
A
W
â
â
Min
40
60
80
100
40
60
80
100
5
0.4
0.7
30
15
3
Max
1
75
1.5
2
Unit
V
V
V
mA
mA
mA
V
V
MHZ
C,Jan,2012
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